Interconnect structure of semiconductor device

ABSTRACT

A device includes a substrate, a first dielectric layer over the substrate, a first conductive feature in the first dielectric layer, and an etch stop layer over the first dielectric layer. The etch stop layer includes metal-doped aluminum nitride. The device further includes a second dielectric layer over the etch stop layer, and a second conductive feature in the second dielectric layer. The second conductive feature extends into the etch stop layer and contacts the first conductive feature.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. application Ser. No.16/423,504, filed on May 28, 2019, which is a continuation of U.S.application Ser. No. 15/587,140, filed on May 4, 2017, now U.S. Pat. No.10,304,729, issued on May 28, 2019, which claims the benefit of U.S.Provisional Application No. 62/427,590, filed on Nov. 29, 2016, whichapplications are hereby incorporated herein by reference.

BACKGROUND

Generally, active devices and passive devices are formed on and in asemiconductor substrate. Once formed, these active devices and passivedevices may be connected to each other and to external devices using aseries of conductive and insulative layers. These layers may help tointerconnect the various active devices and passive devices as well asprovide an electrical connection to external devices through, forexample, a contact pad.

To form these interconnections within these layers, a series ofphotolithographic, etching, deposition, and planarization techniques maybe employed. However, the use of such techniques has become morecomplicated as the size of active and passive devices have been reduced,causing a reduction in the size of the interconnects to be desired aswell. As such, improvements in the formation and structure of theinterconnects is desired in order to make the overall devices smaller,cheaper, and more efficient with fewer defects or problems.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-7 illustrate cross-sectional views of various intermediatestages of fabrication of a semiconductor structure in accordance withsome embodiments.

FIG. 8 is a flow diagram illustrating a method of forming asemiconductor structure in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Embodiments will be described with respect to a specific context,namely, a method of forming interconnects in a semiconductor structure.Various embodiments discussed herein allow for preventingoxidation/corrosion of interconnects and allow for preventing formationof hydride and hydroxyl impurities within interconnects.

Referring to FIG. 1, a portion of the semiconductor structure 100 isillustrated. The semiconductor structure 100 may be an intermediatestructure of an integrated circuit manufacturing process. In someembodiments, the semiconductor structure 100 may comprise a substrate101. The substrate 101 may comprise, for example, bulk silicon, doped orundoped, or an active layer of a semiconductor-on-insulator (SOI)substrate. Generally, an SOI substrate comprises a layer of asemiconductor material, such as silicon, formed on an insulator layer.The insulator layer may be, for example, a buried oxide (BOX) layer or asilicon oxide layer. The insulator layer is provided on a substrate,such as a silicon or glass substrate. Alternatively, the substrate 101may include another elementary semiconductor, such as germanium; acompound semiconductor including silicon carbide, gallium arsenic,gallium phosphide, indium phosphide, indium arsenide, and/or indiumantimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs,AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof. Othersubstrates, such as multi-layered or gradient substrates, may also beused.

In some embodiments, one or more active and/or passive devices 103(illustrated in FIG. 1 as a single transistor) are formed on thesubstrate 101. The one or more active and/or passive devices 103 mayinclude various N-type metal-oxide semiconductor (NMOS) and/or P-typemetal-oxide semiconductor (PMOS) devices, such as transistors,capacitors, resistors, diodes, photo-diodes, fuses, and the like. One ofordinary skill in the art will appreciate that the above examples areprovided for the purpose of illustration only and are not meant to limitthe present disclosure in any manner. Other circuitry may be also usedas appropriate for a given application.

In some embodiments, an interconnect structure 105 is formed over theone or more active and/or passive devices 103 and the substrate 101. Theinterconnect structure 105 electrically interconnects the one or moreactive and/or passive devices 103 to form functional electrical circuitswithin the semiconductor structure 100. The interconnect structure 105may comprise one or more metallization layers 109 ₀ to 109 _(M), whereinM+1 is the number of the one or more metallization layers 109 ₀ to 109_(M). In some embodiments, the value of M may vary according to designspecifications of the semiconductor structure 100. In what follows, theone or more metallization layers 109 ₀ to 109 _(M) may also becollectively referred to as the one or more metallization layers 109.The one or more metallization layers 109 ₀ to 109 _(M), comprise one ormore dielectric layers 111 ₀ to 111 _(M), respectively.

In some embodiments, the dielectric layer 111 ₀ is an inter-layerdielectric (ILD) layer, and the dielectric layers 111 ₁ to 111 _(M) areinter-metal dielectric (IMD) layers. The ILD layer and the IMD layersmay include low-k dielectric materials having k values, for example,lower than about 4.0 or even 2.0 disposed between such conductivefeatures. In some embodiments, the ILD layer and IMD layers may be madeof, for example, phosphosilicate glass (PSG), borophosphosilicate glass(BPSG), fluorosilicate glass (FSG), SiOxCy, Spin-On-Glass,Spin-On-Polymers, silicon carbon material, compounds thereof, compositesthereof, combinations thereof, or the like, formed by any suitablemethod, such as spin-on coating, chemical vapor deposition (CVD),plasma-enhanced CVD (PECVD), or the like.

In some embodiments, the dielectric layers 111 ₀ comprises conductiveplugs 115 ₀, and the dielectric layers 111 ₁ to 111 _(M-1) comprise oneor more conductive interconnects, such as conductive lines 113 ₁ to 113_(M-1) and conductive vias 115 ₁ to 115 _(M-1), respectively. Theconductive plugs 115 ₀ electrically couple the one or more active and/orpassive devices 103 to the conductive lines 113 ₁ to 113 _(M-1) and theconductive vias 115 ₁ to 115 _(M-1). As described below in greaterdetail, conductive lines 113 _(M) and conductive vias 115 _(M) (notillustrated in FIG. 1, see FIG. 7) are formed in the dielectric layer111 _(M).

In some embodiments, the conductive plugs 115 ₀, the conductive lines113 ₁ to 113 _(M-1) and the conductive vias 115 ₁ to 115 _(M-1) may beformed using any suitable method, such as damascene, dual damascene, orthe like. The conductive plugs 115 ₀, the conductive lines 113 ₁ to 113_(M-1) and the conductive vias 115 ₁ to 115 _(M-1) may compriseconductive materials such as copper, aluminum, tungsten, combinationsthereof, or the like. The conductive plugs 115 ₀, the conductive lines113 ₁ to 113 _(M-1) and the conductive vias 115 ₁ to 115 _(M-1) mayfurther comprise one or more barrier/adhesion layers (not shown) toprotect the respective dielectric layers 111 ₀ to 111 _(M-1) fromdiffusion and metallic poisoning. The one or more barrier/adhesionlayers may comprise titanium, titanium nitride, tantalum, tantalumnitride, a combination thereof, or the like, and may be formed usingphysical vapor deposition (PVD), CVD, atomic layer deposition (ALD), acombination thereof, or the like. In an embodiment, the steps forforming the conductive plugs 115 ₀, the conductive lines 113 ₁ to 113_(M-1) and the conductive vias 115 ₁ to 115 _(M-1) may include formingopenings in the respective dielectric layers 111 ₀ to 111 _(M-1) ,depositing barrier/adhesion layers in the openings, depositing seedlayers of a suitable conductive material over barrier/adhesion layers,and filling the openings with a suitable conductive material, forexample, by plating, or other suitable methods. A chemical mechanicalpolishing (CMP) is then performed to remove excess materials overfillingthe openings.

In some embodiments, etch stop layers (not shown) may be formed betweenadjacent ones of the dielectric layers 111 ₀ to 111 _(M). In theillustrated embodiment, such an etch stop layer (ESL) 117 is formedbetween the dielectric layers 111 _(M-1) and 111 _(M). The etch stoplayers aid in patterning the dielectric layers 111 ₀ to 111 _(M) to formopenings in the dielectric layers 111 ₀ to 111 _(M). A material for theetch stop layers is chosen such that etch rates of the etch stop layersare less then etch rates of corresponding ones of the dielectric layers111 ₀ to 111 _(M), and such that the etch stop layers have a goodadhesion with the corresponding ones of the dielectric layers 111 ₀ to111 _(M). In the illustrated embodiment, an etch rate of the ESL 117 isless than an etch rate of the dielectric layer 111 _(M). As describedbelow in greater detail, the ESL 117 is used for preventingoxidation/corrosion of the conductive lines 113 _(M-1) and forpreventing formation of hydride and hydroxyl impurities within theconductive lines 113 _(M-1).

In some embodiments, the ESL 117 may comprise metal-doped aluminumnitride (Al(M)N), where the metallic element M may include Cr, Al, Ti,Sn, Zn, Mg, Ag, or the like, and may be epitaxially deposited using CVD,PECVD, a combination thereof, or the like. In some embodiments, athickness T₁ of the ESL 117 may be between about 100 nm and about 200nm. In some embodiments, Al(M)N is in situ doped by using appropriateprecursors for the metallic element M during the deposition. Inalternative embodiments, Al(M)N may be formed by depositing AlN over thedielectric layer 111 _(M) and the conductive lines 113 _(M-1), andsubsequently doping AlN with the metallic element M using, for example,an implantation method. In some embodiments, an atomic percentage of themetallic element M in Al(M)N is between about 5% and about 10%. Bychoosing such a percentage of the metallic element M in Al(M)N, the etchselectivity and adhesion properties of Al(M)N are improved compared toMN, without significantly affecting a conductivity of Al(M)N, such thatAl(M)N provides sufficient insulating capabilities between adjacentconductive features, such as adjacent conductive lines 113 _(M-1) andsubsequently formed adjacent conductive vias 115 _(M) (see FIG. 7).

In alterative embodiments, the ESL 117 may comprise one or more layersof dielectric materials such as oxides (such as silicon oxide, aluminumoxide, or the like), nitrides (such as SiN, or the like), oxynitrides(such as SiON, or the like), oxycarbides (such as SiOC, or the like),carbonitrides (such as SiCN, or the like), combinations thereof, or thelike, and may be formed using spin-on coating, CVD, PECVD, ALD, acombination thereof, or the like.

Referring further to FIG. 1, a mask stack 119 is formed over thedielectric layer 111 _(M). As described below in greater detail, themask stack 119 is used to aid in patterning of the dielectric layer 111_(M). In some embodiments, the mask stack 119 comprises one or more masklayers. In the illustrated embodiment, the mask stack 119 comprises afirst mask layer 119 ₁, and a second mask layer 119 ₂ over the firstmask layer 119 ₁. In some embodiments, a thickness of the first masklayer 119 ₁ may be between about 150 nm and about 200 nm. In someembodiments, the first mask layer 119 ₁ includes a dielectric material,such as silicon oxide, silicon nitride, silicon oxynitride, siliconcarbide, silicon carbonitride, a combination thereof, or the like, andmay be formed using an oxidation process, ALD, CVD, PVD, a combinationthereof, or the like. Accordingly, the first mask layer 119 ₁ may bealso referred to as a dielectric mask layer 119 ₁. In some embodiments,the first mask layer 119 ₁ may act as an anti-reflective coating (ARC)and may be also referred to as an ARC 119 ₁.

In some embodiments, the first mask layer 119 ₁ comprises siliconcarbide, which is doped with oxygen (O) and nitrogen (N). Contents ofcarbon and nitrogen in the first mask layer 119 ₁ may be tuned toachieve desired etching characteristics for the first mask layer 119 ₁.In some embodiments, the first mask layer 119 ₁ is substantially freefrom nitrogen. In such embodiments, the first mask layer 119 ₁ may bealso referred to as a nitrogen-free ARC (NFARC) 119 ₁.

In some embodiments, the second mask layer 119 ₂ may comprise a metalnitride compound, such as titanium nitride (TiN), tantalum nitride(TaN), or the like, and may be formed using CVD, PECVD, ALD, acombination thereof, or the like. Accordingly, the second mask layer 119₂ may be also referred to as a metal mask layer 119 ₂. In someembodiments, a thickness of the second mask layer 119 ₂ may be betweenabout 150 nm and about 200 nm. In alternative embodiments, the firstmask layer 119 ₁ of the mask stack 119 may be omitted. In suchembodiments, the mask stack 119 may comprise a layer of a nitridematerial.

Referring to FIG. 2, the mask stack 119 and the dielectric layer 111_(M) are patterned to form openings 201 in the dielectric layer 111_(M). The openings 201 comprise lower portions 201 ₁, which may be alsoreferred to as via openings 201 ₁, and upper portions 201 ₂, which maybe also referred to as line openings 201 ₂. In some embodiments, theopenings 201 may be formed by a “via first” process. In otherembodiments, the openings 201 may be formed by a “trench first” process.

In some embodiments when the openings 201 are formed using a “via first”process, the via openings 201 ₁ are formed before forming the lineopenings 201 ₂. In some embodiments, a first patterned mask (not shown)is formed on the second mask layer 119 ₂. A material of the firstpatterned mask is deposited on the second mask layer 119 ₂. The materialof the first patterned mask is then irradiated (exposed), cured, anddeveloped to remove a portion of the material of the first patternedmask, thereby forming the first patterned mask. In some embodiments, thefirst patterned mask may comprise a photoresist, or any suitablephoto-patternable material.

In some embodiments, the first patterned mask is used to pattern thefirst mask layer 119 ₁, the second mask layer 119 ₂, and the dielectriclayer 111 _(M), and form the via openings 201 ₁. Portions of the firstmask layer 119 ₁, the second mask layer 119 ₂, and the dielectric layer111 _(M) unprotected by the first patterned mask are etched using afirst etch process. In some embodiments, the first etch process maycomprise one or more suitable etch processes, such as, for example, ananisotropic dry etch process, or the like. In an embodiment, the firstetch process includes a reactive ion etch (RIE) process performed withprocesses gasses such as C₄F₈, CH₂F₂, CF₄, O₂, N₂, Ar, the like, ormixtures thereof. In an embodiment, a process gas mixture of a RIEprocess includes process gases that chemically etch the first mask layer119 ₁, the second mask layer 119 ₂, and the dielectric layer 111 _(M).In some embodiments, the entire first patterned mask may be fullyconsumed prior to completion of the first etch process. In suchembodiments, the first mask layer 119 ₁ and the second mask layer 119 ₂are used as an etch mask to complete the first etch process.

In some embodiments, the first etch process stops when the via openings201 ₁ reach the ESL 117, such that bottoms 201 b ₁ of the via openings201 ₁ expose portions of the ESL 117. In alternative embodiments, thefirst etch process stops before the via openings 201 ₁ reach the ESL117. In such embodiments, the bottoms 201 b ₁ of the via openings 201 ₁expose portions of the dielectric layer 111 _(M). Subsequently,remaining portions of the first patterned mask, if any, are removed. Insome embodiments when the first patterned mask is formed of aphotoresist material, the remaining portions of the first patterned maskmay be removed using, for example, an ashing process in combination witha wet clean process.

After forming the via openings 201 ₁, the line openings 201 ₂ are formedin the dielectric layer 111 _(M). In some embodiments, a secondpatterned mask (not shown) is formed on the second mask layer 119 ₂. Amaterial of the second patterned mask is deposited on the second masklayer 119 ₂. The material of the second patterned mask is thenirradiated (exposed), cured, and developed to remove a portion of thematerial of the second patterned mask, thereby forming the secondpatterned mask. In some embodiments, the second patterned mask maycomprise a photoresist, or any suitable photo-patternable material.

In some embodiments, the second patterned mask is used to pattern thefirst mask layer 119 ₁, the second mask layer 119 ₂, and the dielectriclayer 111 _(M), and to form the line openings 201 ₂. Portions of thefirst mask layer 119 ₁, the second mask layer 119 ₂, and the dielectriclayer 111 _(M) unprotected by the second patterned mask are etched usinga second etch process. In some embodiments, the second etch process maycomprise one or more suitable etch processes, such as, for example, ananisotropic dry etch process, or the like. In an embodiment, the secondetch process includes a RIE process performed with processes gasses suchas C₄F₈, CH₂F₂, CF₄, O₂, N₂, Ar, the like, or mixtures thereof. In anembodiment, a process gas mixture of a RIE process includes processgases that chemically etch the first mask layer 119 ₁, the second masklayer 119 ₂, and the dielectric layer 111 _(M). In some embodiments, thefirst etch process and the second etch process may be performed withdifferent mixtures of process gases. In other embodiments, the firstetch process and the second etch process may be performed with a samemixtures of process gases. In some embodiments, the entire secondpatterned mask may be fully consumed prior to completion of the secondetch process. In such embodiments, the first mask layer 119 ₁ and thesecond mask layer 119 ₂ are used as an etch mask to complete the secondetch process.

In some embodiments, the second etch process may further extend the viaopenings 201 ₁. In some embodiments when the ESL 117 is not exposedafter the first etch process, the second etch process further etches thedielectric layer 111 _(M), such that the bottoms 201 b ₁ of the viaopenings 201 ₁ (shown by dashed lines in FIG. 2) expose portions of theESL 117. In other embodiments when the ESL 117 is exposed after thefirst etch process, the second etch process etches the ESL 117, suchthat the via openings 201 ₁ partially extend into the ESL 117. In suchembodiments, the bottoms 201 b ₁ of the via openings 201 ₁ are disposedwithin the ESL 117 below a topmost surface of the ESL 117. Subsequently,remaining portions of the second patterned mask, if any, are removed. Insome embodiments when the second patterned mask is formed of aphotoresist material, the remaining portions of the second patternedmask may be removed using, for example, an ashing process in combinationwith a wet clean process.

Referring further to FIG. 2, in alternative embodiments, the openings201 are formed using a “trench first” process. In such embodiments,formation process of the openings 201 is similar to the “via firstprocess” described above with a distinction that the line openings 201 ₂are formed before forming the via openings 201 ₁.

Referring to FIG. 3, the second mask layer 119 ₂ of the mask stack 119is removed from the semiconductor structure 100. In some embodiments,the second mask layer 119 ₂ is removed using, for example, a blanketetch process. In some embodiments in which the second mask layer 119 ₂is formed of TiN, a wet etch process with a solution comprising ammoniumhydroxide (NH₄OH), hydrogen peroxide (H₂O₂) and deionized water (H₂O)may be used to remove the second mask layer 119 ₂. In other embodiments,other suitable removal processes may be used to remove the second masklayer 119 ₂. In some embodiments, the first mask layer 119 ₁ remains onthe dielectric layer 111 _(M) to protect the dielectric layer 111 _(M)from a damage (e.g., plasma damage) induced by a subsequent etchprocess. Furthermore, as described below in greater detail, the firstmask layer 119 ₁ acts as an etch mask for a subsequent etch process.

Referring to FIG. 4, a third etch process is performed on thesemiconductor structure 100 to extend the openings 201 (see FIG. 3)towards the metallization layer 109 _(M-1), thereby forming openings401. The openings 401 comprise lower portions 401 ₁, which may also bereferred to as via openings 401 ₁, and upper portions 401 ₂, which mayalso be referred to as line openings 401 ₂. The via openings 401 ₁correspond to the via openings 201 ₁ (see FIG. 3), and the line openings401 ₂ correspond to the line openings 201 ₂ (see FIG. 3). In someembodiments, the third etch process removes portions of the dielectriclayer 111 _(M) disposed below the bottoms 201 b ₂ of the line openings201 ₂ (see FIG. 3) and portions of the ESL 117 disposed below thebottoms 201 b ₁ of the via openings 201 ₁ (see FIG. 3). Accordingly, thebottoms 401 b ₁ of the via openings 401 ₁ are lower than the bottoms 201b ₁ of the via openings 201 ₁, and the bottoms 401 b ₂ of the lineopenings 401 ₂ are lower than the bottoms 201 b ₂ of the line openings201 ₂. Furthermore, the third etch process may also round corners of theopenings 401 (illustrated by dashed lines in FIG. 4), such that thebottoms 401 b ₂ of the line openings 401 ₂ may smoothly join sidewallsof the via openings 401 ₁. In some embodiments, the third etch processmay comprise one or more suitable etch processes, such as an anisotropicdry etch process, or the like. In an embodiment, the third etch processincludes a RIE process performed with processes gasses such as C₄F₈,CH₂F₂, CF₄, O₂, N₂, Ar, the like, or mixtures thereof. In an embodiment,a process gas mixture of a RIE process includes process gases thatchemically etch the second mask layer 119 ₂, the dielectric layer 111_(M), and the ESL 117. In some embodiments, the third etch process andthe first etch process may be performed with different mixtures ofprocess gases. In other embodiments, the third etch process and thesecond etch process may be performed with different mixtures of processgases.

Referring further to FIG. 4, in the illustrated embodiment, a least aportion of the ESL 117 remains interposed between the bottoms 401 b ₁ ofthe via openings 401 ₁ and the conductive lines 113 _(M-1), such thatthe conductive lines 113 _(M-1) are not exposed by the via openings 401₁. By not exposing the conductive lines 113 _(M-1) during the third etchprocess, oxidation/corrosion of the conductive lines 113 _(M-1) andformation of hydride and hydroxyl impurities within the conductive lines113 _(M-1) may be prevented. In some embodiments, portions of the ESL117 interposed between the bottoms 401 b ₁ of the via openings 401 ₁ andthe conductive lines 113 _(M-1) may have a thickness T₂ between about0.1 Å and about 0.5 Å. In some embodiments, such a range for thethickness T₂ allows for protecting the conductive lines 113 _(M-1) fromoxidation/corrosion and form formation of hydride and hydroxylimpurities.

Referring to FIG. 5, the portions of the ESL 117 interposed between thebottoms 401 b ₁ of the via openings 401 ₁ (see FIG. 4) and theconductive lines 113 _(M-1) are removed to expose underlying conductivelines 113 _(M-1), thereby forming openings 501. The openings 501comprise lower portions 501 ₁, which may also be referred to as viaopenings 501 ₁, and upper portions 501 ₂, which may also be referred toas line openings 501 ₂. The via openings 501 ₁ correspond to the viaopenings 401 ₁ (see FIG. 4), and the line openings 501 ₂ correspond tothe line openings 401 ₂ (see FIG. 4), with bottoms 501 b ₁ of the viaopenings 501 ₁ being lower than the bottoms 401 b ₁ of the via openings401 ₁ (see FIG. 4). In some embodiments, the removal process for the ESL117 may not substantially remove the dielectric layer 111 _(M). In suchembodiments, bottoms 501 b ₂ of the line openings 501 ₂ may beapproximately at a same level as the bottoms 401 b ₂ of the lineopenings 401 ₂ (see FIG. 4). In alternative embodiments, the removalprocess for the ESL 117 may also remove portions of the dielectric layer111 _(M). In such embodiments, the bottoms 501 b ₂ of the line openings501 ₂ may be lower than the bottoms 401 b ₂ of the line openings 401 ₂(see FIG. 4).

Referring further to FIG. 5, in some embodiments, the portions of theESL 117 interposed between the bottoms 401 b ₁ of the via openings 401 ₁(see FIG. 4) and the conductive lines 113 _(M-1) may be removed bysputtering, ion milling, or the like. The sputtering process may beperformed by bombarding the desired portions of the ESL 117 with ions ofan inert (non-reactive) gas, such as Argon (Ar), Nitrogen (N₂), amixture thereof, or the like. In an embodiment, a process gas mixture ofa sputtering process does not include process gases that chemically etchthe ESL 117. By using inert gases to expose the conductive lines 113_(M-1), oxidation/corrosion of the conductive lines 113 _(M-1) may beprevented. In alternative embodiments, the portions of the ESL 117interposed between the bottoms 401 b ₁ of the via openings 401 ₁ (seeFIG. 4) and the conductive lines 113 _(M-1) may be removed using othersuitable removal processes, which does not oxidize the conductive lines113 _(M-1).

Referring to FIG. 6, the openings 501 (see FIG. 5) are filled withsuitable conductive materials to form the conductive lines 113 _(M) andthe conductive vias 115 _(M) (see FIG. 7). In some embodiments, one ormore barrier/adhesion layers 601 are formed on bottoms and sidewalls ofthe openings 501. The one or more barrier/adhesion layers 601 protectthe dielectric layer 111 _(M) from diffusion and metallic poisoning. Insome embodiments, the one or more barrier/adhesion layers 601 maycomprise titanium, titanium nitride, tantalum, tantalum nitride, acombination thereof, or the like, and may be formed using PVD, CVD, ALD,a combination thereof, or the like.

In some embodiments, a seed layer 603 is formed over the one or morebarrier/adhesion layers 601. The seed layer 603 may comprise copper,titanium, nickel, gold, manganese, a combination thereof, or the like,and may be formed by ALD, CVD, PVD, sputtering, a combination thereof,or the like. Subsequently, the openings 501 are filled with a conductivematerial 605. The conductive material 605 may comprise copper, aluminum,tungsten, combinations thereof, alloys thereof, or the like, and may beformed using, for example, by plating, or other suitable methods.

Referring to FIG. 7, portions of the one or more barrier/adhesion layers601, the seed layer 603 and the conductive material 605 overfilling theopenings 501 (see FIGS. 5 and 6) are removed to expose a top surface ofthe dielectric layer 111 _(M). In some embodiments, the portions of theone or more barrier/adhesion layers 601, the seed layer 603 and theconductive material 605 overfilling the openings 501 may be removedusing a CMP process, a grinding process, an etching process, acombination thereof, or the like. Remaining portions of the one or morebarrier/adhesion layers 601, the seed layer 603 and the conductivematerial 605 filling the via openings 501 ₁ (see FIGS. 5 and 6) formconductive vias 115 _(M), and remaining portions of the one or morebarrier/adhesion layers 601, the seed layer 603 and the conductivematerial 605 filling the line openings 501 ₂ (see FIGS. 5 and 6) formconductive lines 113 _(M).

In some embodiments, the metallization layer 109 _(M) may be the lastmetallization layer of the interconnect structure 105 and the formationof the metallization layer 109 _(M) completes the formation of theinterconnect structure 105. In other embodiments, the metallizationlayer 109 _(M) may be an intermediate metallization layer of theinterconnect structure 105. In such embodiments, additionalmetallization layers are formed over the metallization layer 109 _(M)until the formation of the interconnect structure 105 is completed. Insome embodiments, further processing steps may be performed on thesemiconductor structure 100 after the formation of the interconnectstructure 105 is completed. The further processing steps may includeformation of contact pads and one or more passivation layers over theinterconnect structure 105, formation of under-bump metallizations(UBMs) over the contact pads, and formation of connectors over the UBMs.Subsequently, the semiconductor structure 100 may be singulated intoseparate dies, which may further undergo various packaging processes.

FIG. 8 is a flow diagram illustrating a method 800 of forming asemiconductor structure in accordance with some embodiments. The method800 starts with step 801, when first conductive features (such as theconductive lines 113 _(M-1) and the conductive vias 115 _(M-1)illustrated in FIG. 1) are formed in a first dielectric layer (such asthe dielectric layer 111 _(M-1) illustrated in FIG. 1) as describedabove with reference to FIG. 1. In step 803, an etch stop layer (such asthe ESL 117 illustrated in FIG. 1) is formed over the first dielectriclayer as described above with reference to FIG. 1. In step 805, a seconddielectric layer (such as the dielectric layer 111 _(M) illustrated inFIG. 1) is formed over the etch stop layer as described above withreference to FIG. 1. In step 807, the second dielectric layer ispatterned to form openings (such as the openings 201 illustrated in FIG.2) in the second dielectric layer as described above with reference toFIG. 2. In step 809, the openings are extended into the etch stop layerto form extended openings (such as the openings 401 illustrated in FIG.4), where portions of the etch stop layer are interposed between bottomsof the extended openings and the first conductive features as describedabove with reference to FIGS. 3 and 4. In step 811, the portions of theetch stop layer interposed between bottoms of the extended openings andthe first conductive features are removed to expose the first conductivefeatures as described above with reference to FIG. 5. In step 813, theextended openings are filled with a conductive material to form secondconductive features (such as the conductive lines 113 _(M) and theconductive vias 115 _(M) illustrated in FIG. 7) in the second dielectriclayer as described above with reference to FIGS. 6 and 7.

Various embodiments discussed herein allow for preventingoxidation/corrosion of interconnects and allow for preventing formationof hydride and hydroxyl impurities within interconnects by not fullyremoving the etch stop layer formed over the interconnects whilechemically etching a dielectric layer formed over the etch stop layer toform openings for subsequently formed interconnects.

According to an embodiment, a method includes forming a first conductivefeature in a first dielectric layer. An etch stop layer is formed overthe first dielectric layer. A second dielectric layer is formed over theetch stop layer. The second dielectric layer and the etch stop layer arepatterned to form an opening, where a portion of the etch stop layer isinterposed between a bottom of the opening and the first conductivefeature. The portion of the etch stop layer is sputtered to extend theopening toward the first conductive feature and form an extendedopening, where the extended opening exposes the first conductivefeature. The extended opening is filled with a conductive material toform a second conductive feature in the second dielectric layer.

According to another embodiment, a method includes forming a firstconductive feature in a first dielectric layer. An etch stop layer isdeposited over the first dielectric layer. A second dielectric layer isdeposited over the etch stop layer. A first mask layer is deposited overthe second dielectric layer. A second mask layer is deposited over thefirst mask layer. A first patterning process is performed on the seconddielectric layer to form an opening in the second dielectric layer,where the first mask layer and the second mask layer are used as acombined mask. The second mask layer is removed. A second patterningprocess is performed on the second dielectric layer and the etch stoplayer to extend the opening into the etch stop layer, where a bottom ofthe opening is disposed within the etch stop layer after performing thesecond patterning process. A sputtering process is performed on thebottom of the opening to expose a portion of the first conductivefeature. A conductive material is deposited into the opening to form asecond conductive feature in the second dielectric layer, where thesecond conductive feature is in electrical contact with the firstconductive feature.

According to yet another embodiment, a method includes forming ametallization layer over a substrate. A metal-doped aluminum nitridelayer is deposited over the metallization layer. A dielectric layer isdeposited over the metal-doped aluminum nitride layer. A first masklayer is deposited over the dielectric layer. A second mask layer isdeposited over the first mask layer. A first etch process is performedon the dielectric layer to form an opening in the dielectric layer,where the first mask layer and the second mask layer are used as acombined etch mask, and where the opening exposes the metal-dopedaluminum nitride layer. A second etch process is performed on thedielectric layer and the metal-doped aluminum nitride layer to extendthe opening into the metal-doped aluminum nitride layer, where the firstmask layer is used as an etch mask, and where a portion of themetal-doped aluminum nitride layer is interposed between a bottom of theopening and a top surface of the metallization layer after performingthe second etch process. A sputtering process is performed to remove theportion of the metal-doped aluminum nitride layer and expose aconductive feature of the metallization layer. The opening is filledwith a conductive material.

According to yet another embodiment, a method includes forming aconductive line in a first dielectric layer. An etch stop layer isformed over the first dielectric layer. A second dielectric layer isformed over the etch stop layer. The second dielectric layer and theetch stop layer are etched to form an opening. A portion of the etchstop layer is interposed between a bottom of the opening and theconductive line. The portion of the etch stop layer is sputtered toextend the opening toward the conductive line and form an extendedopening. The extended opening exposes a top surface of the conductiveline.

According to yet another embodiment, a method includes forming aconductive line in a first dielectric layer. An etch stop layer isdeposited over the first dielectric layer. A second dielectric layer isdeposited over the etch stop layer. A first etch process is performed onthe second dielectric layer to form an opening in the second dielectriclayer. A second etch process is performed on the second dielectric layerand the etch stop layer to extend the opening into the etch stop layer.A bottom of the opening is disposed within the etch stop layer afterperforming the second etch process. A sputtering process is performed onthe bottom of the opening to expose a portion of the conductive line.

According to yet another embodiment, a method includes forming ametallization layer over a substrate. An aluminum nitride layer isdeposited over the metallization layer. A dielectric layer is depositedover the aluminum nitride layer. A first etch process is performed onthe dielectric layer to form an opening in the dielectric layer. Theopening exposes the aluminum nitride layer. A second etch process isperformed on the dielectric layer and the aluminum nitride layer toextend the opening into the aluminum nitride layer. A portion of thealuminum nitride layer is interposed between a bottom of the opening anda top surface of the metallization layer after performing the secondetch process. The portion of the aluminum nitride layer is removed toexpose a conductive feature of the metallization layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming a conductive line ina first dielectric layer; forming an etch stop layer over the firstdielectric layer; forming a second dielectric layer over the etch stoplayer; etching the second dielectric layer and the etch stop layer toform an opening, wherein a portion of the etch stop layer is interposedbetween a bottom of the opening and the conductive line; and sputteringthe portion of the etch stop layer to extend the opening toward theconductive line and form an extended opening, wherein the extendedopening exposes a top surface of the conductive line.
 2. The method ofclaim 1, wherein forming the etch stop layer comprises: depositing analuminum nitride layer over the first dielectric layer; and in situdoping the aluminum nitride layer with metal dopants.
 3. The method ofclaim 2, wherein an atomic percentage of the metal dopants in the etchstop layer is between 5% and 10%.
 4. The method of claim 2, wherein themetal dopants comprise Cr, Al, Ti, Sn, Zn, Mg, or Ag.
 5. The method ofclaim 1, wherein forming the etch stop layer comprises: depositing analuminum nitride layer over the first dielectric layer; and implantingmetal dopants into the aluminum nitride layer.
 6. The method of claim 1,further comprising filling the extended opening with a conductivematerial.
 7. The method of claim 1, wherein the sputtering is performedusing ions of a non-reactive gas.
 8. A method comprising: forming aconductive line in a first dielectric layer; depositing an etch stoplayer over the first dielectric layer; depositing a second dielectriclayer over the etch stop layer; performing a first etch process on thesecond dielectric layer to form an opening in the second dielectriclayer; performing a second etch process on the second dielectric layerand the etch stop layer to extend the opening into the etch stop layer,wherein a bottom of the opening is disposed within the etch stop layerafter performing the second etch process; and performing a sputteringprocess on the bottom of the opening to expose a portion of theconductive line.
 9. The method of claim 8, further comprising, afterperforming the sputtering process, depositing a conductive material intothe opening.
 10. The method of claim 8, wherein depositing the etch stoplayer comprises: depositing an aluminum nitride layer over the firstdielectric layer; and in situ doping the aluminum nitride layer withmetal dopants.
 11. The method of claim 10, wherein an atomic percentageof the metal dopants in the etch stop layer is between 5% and 10%. 12.The method of claim 8, wherein the etch stop layer has an as-depositedthickness between 100 nm and 200 nm.
 13. The method of claim 8, whereinthe second etch process is different from the first etch process. 14.The method of claim 8, wherein the sputtering process is performed usingions of an argon gas, a nitrogen gas, or a mixture thereof.
 15. A methodcomprising: forming a metallization layer over a substrate; depositingan aluminum nitride layer over the metallization layer; depositing adielectric layer over the aluminum nitride layer; performing a firstetch process on the dielectric layer to form an opening in thedielectric layer, wherein the opening exposes the aluminum nitridelayer; performing a second etch process on the dielectric layer and thealuminum nitride layer to extend the opening into the aluminum nitridelayer, wherein a portion of the aluminum nitride layer is interposedbetween a bottom of the opening and a top surface of the metallizationlayer after performing the second etch process; and removing the portionof the aluminum nitride layer to expose a conductive feature of themetallization layer.
 16. The method of claim 15, wherein the second etchprocess is different from the first etch process.
 17. The method ofclaim 15, further comprising in situ doping the aluminum nitride layerwith metal dopants.
 18. The method of claim 15, further comprisingimplanting metal dopants into the aluminum nitride layer.
 19. The methodof claim 18, wherein the metal dopants comprise Cr, Al, Ti, Sn, Zn, Mg,or Ag.
 20. The method of claim 15, wherein removing the portion of thealuminum nitride layer comprises performing a sputtering process on thealuminum nitride layer using non-reactive ions.